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Typical Characteristics T C = 25°C unless otherwise noted
1.2
V GS = V DS , I D = 250 μ A
1.15
I D = 250 μ A
1.10
1.0
1.05
0.8
1.00
0.6
0.95
0.4
0.90
-80
-40
0 40 80 120 160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
10000
C ISS = C GS + C GD
T J , JUNCTION TEMPERATURE ( o C)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V DD = 40V
8
C OSS ? C DS + C GD
6
1000
C RSS = C GD
4
WAVEFORMS IN
2
DESCENDING ORDER:
I D = 80A
100
V GS = 0V, f = 1MHz
0
I D = 10A
0.1
1
10
75
0
25
50
75
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Q g , GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
5
www.fairchildsemi.com
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相关PDF资料
P51-100-A-D-D-5V-000-000
SENSOR 100PSI 7/16-20 UNF 1-5V
P51-75-A-D-D-5V-000-000
SENSOR 75PSI 7/16-20 UNF 1-5V
P51-750-A-C-D-5V-000-000
SENSOR 750PSI M12-1.5 6G 1-5V
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SENSOR 200PSI M12-1.5 6G 1-5V
ASEMPC-24.000MHZ-Z-T
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